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7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
X1000 Chip Device Layout
Features
Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's single ended fed (no external balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC doubler has a +15.0 dBm output drive and is an excellent LO doubler that can be used to drive fundamental mixer devices. It is also well suited to drive Mimix's XR1002 receiver device. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Parameter
Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Harmonic Gain (fout) Fundamental Rejection (fin) Saturated Output Power (Psat) RF Input Power (RF Pin) Output Power at +0.0 dBm Pin (Pout) Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V, Vg2=0.0V Typical) Source Voltage (Vss) Source Current (Iss)
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Voltage (Vss) Supply Current (Id) Supply Current (Iss) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC -6.0 VDC 300 mA 60 mA +0.3 VDC +12.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Units GHz GHz dB dB dB dBc dBm dBm dBm VDC VDC VDC mA VDC mA Min. 7.5 15.0 -10.0 -1.2 -1.2 -5.5 25 Typ. TBD 12.0 13 20 +15 +13.0 +5.0 -0.6 0.0 220 -5.0 50 Max. 25.0 50.0 +10.0 +5.5 +0.1 +0.1 250 -2.0 60
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Doubler Measurements
Harmonic Gain and Fundamental Rejection vs Output Freq. Pin = 0 dBm
20 P out ( 2xF in) 15 10 5
Pou t (dBm)
XX100 0: Po ut (2xF in) an d Po ut (F in) v s . F in (GHz) Pin = -8 to +6 dBm
, Pin (dB m)=-8 , Pin (dB m)=-6 , Pin (dB m)=-4 , Pin (dB m)=-2 , P in (dBm)= 0 , P in (dBm)= 2 , P in (dBm)= 4 , P in (dBm)= 6 , Pin (dB m)=-8 , Pin (dB m)=-6 , Pin (dB m)=-4 , Pin (dB m)=-2 , P in (dBm)= 0 , P in (dBm)= 2 , P in (dBm)= 4 , P in (dBm)= 6
0 -5 -10 -15 -20 -25 8 10 12 14 Fin ( GHz) 16 18 20 22
P out (Fi n)
0458_4_sa mples: Po ut (2xF in) vs . Fin (GHz) Pin=0dBm , VD 1=5V, VG1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open
20
0458_4_s amples: Pout (Fin) vs . F in (GHz) Pi n=0dBm , VD 1=5V, VG1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open
20
18 16
15
Po ut ( 2xFi n)
10
14
5
12 Pout (2xFin)
Pout (Fin)
P out (2 xF in)
10 8
0
-5
6
P out (1 xF in)
-10
4
2 0 8 10 12 14 Fin ( G Hz) 16 18 20 22
-15
-20 8 10 12 14 Fin ( G Hz) 16 18 20 22
Harmonic Products, Pin = +5 dBm (Fin = 6 - 20 GHz)
20 2nd (RF out) 15 10 5 4th Fund. (5dBm)
20 15
Harmonic Products, Pin = +0 dBm (Fin = 6 - 20 GHz)
2nd (RF out) 10 5 Fund. (0dBm) 4th 2xFin (0dBm) 3xFin (0dBm) -5 -10 -15 -20 -25 -30 3rd 5th 7th Fund 6th 4xFin (0dBm) 5xFin (0dBm) 6xFin (0dBm) 7xFin (0dBm)
Pout (dBm)
0 -5 Fund -10 5th -15 -20 -25 -30 5 10 15 20 25 30 35 40 45 3rd 7th 6th
3xFin (5dBm) 4xFin (5dBm) 5xFin (5dBm) 6xFin (5dBm) 7xFin (5dBm)
Pout (dBm)
2xFin (5dBm)
0
5
10
15
20
25
30
35
40
45
Fout (GHz)
Fout (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
X1000
0.295 (0.012) 0.695 (0.027)
Mechanical Drawing
1.620 (0.064)
2
3
0.791 (0.031)
1
4 7
0.0 0.0 0.295 0.494 (0.012) (0.019) 0.894 (0.035) 1.560 (0.061)
6
5
0.196 (0.008)
(Note: Engineering designator is 40DBL0458)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2) Bond Pad #6 (Vss) Bond Pad #7 (Vg1)
Bias Arrangement
2 3
Vd1
Vd2
Bypass Capacitors - See App Note [2]
RF In
1
4 7 6 5
RF Out
Vg1
Vss
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
X1000
App Note [1] Biasing - It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=5.0V with Id1=80mA
and Id2=140mA and Vss=-5.0V with Iss=50mA. XX1000 provides good performance at reduced bias with Vss=-2.0V and Iss=25mA. Maximum output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and Vg2=0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2, Vss and Vg1, 2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Channel Temperature deg Celsius deg Celsius deg Celsius
Rth
MTTF Hours
FITs
C/W C/W C/W
E+ E+ E+
E+ E+ E+
Bias Conditions: Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Device Schematic
Typical Application
XR1002 BPF RF IN 21.5-23.5 GHz IR Mixer IF Out 2 GHz
AGC Control Atten=0-12dB LO(+3.0dBm) 9.75-11.75 GHz 11.75-12.75 GHz XX1000 X2 19.5-21.5 GHz (USB Operation) 23.5-25.5 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-34.0 GHz Doubler/Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 34 GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler
April 2006 - Rev 10-Apr-06
Handling and Assembly Information
Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
X1000
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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